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  Deposition Etching Lithography Packaging Cleaning CMP Thermal Oxide Growth LPCVD Nitride LPCVD Polysilicon LPCVD LTO
• Process
  Sputter Evaporation Parylene RIE DRIE Wet Etch Vapor Prime Dicing Wirebonding Wafer Bonding Chemical Solvent Plasma CMP Positive Photoresist Lift-0ff Negative Photoresist PECVD ALD Wet Oxidation Dry Oxides Greater than 30nm Dry Oxides 30nm or Less Low Stress Nitride Stoichiometric Nitride Undoped Polysilicon Doped Polysilicon LTO 400C 300mT PSG 400C 300mT NIT DEP 200MPa
• Tool
  Denton Discovery 18 TMV Super Denton SJ20C CHA SEL600 SCS PDS-2010 Oxford Plasmalab 80 Oxford 100 ICP Etch Solution YES LP-III Disco DAD641 MEI Wedge EVG 520 IS Wet Bench Solvent Hood Spin Rinse Dryer Strasbaugh 6EC Thick Resist Thin Resist Multiple Oxford Plasmalab 80 Plus Denton 635 Cambridge Fiji F200 CLEANOX NITRIDE Furnace POLY Furnace LTO Furnace
• Material
  Al Cr Ti Au W ITO Ag C TiW Ir IrO Pt Parylene SiO2 SiN Si PR S1813 Descum N/A HMDS Silicon Glass Cu Si-Metal-Si Si-Glass Polymer-Si-Polymer Si-Si RCA Piranha Acetone IPA Methanol diH2O Oxygen Plasma AZ 9260 LOR 10B Pre-deposition Post-deposition S1813 nLOF 2020 SU-8 2025 SiO2 (100C) SiO2 (300C) SiNx (100C) SiNx (300C) BB Bosch 9:5-15C 80:80 SF6-C4F8 BB Bosch 10:5-15C 80:80 SF6-C4F8 BB Bosch 11:5-15C 80:80 SF6-C4F8 BB Bosch 12:5-15C 80:80 SF6-C4F8 Ni NiFe 80:20 Ta YSZ Plasma Al2O3 250C Plasma HfO2 200C Plasma SiO2 150C Plasma SiO2 200C Plasma TiO2 250C Thermal Al203 100C Thermal Al203 200C Thermal Al203 250C Thermal HfO2 200C Thermal TiO2 250 C H2O, O2, N2 O2, N2 SiCl2H2, NH3, N2 SiH4, N2 SiH4, PH3, N2 SiH4, O2 SiH4, O2, PH3 in SiH4 NbTi 50:50 NiCr Mo GeSbTe