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Cleaning
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LPCVD Nitride
LPCVD Polysilicon
Packaging
Thermal Oxide Growth
Process
ALD
Boron Doping
Chemical
CMP
Dicing
Doped Polysilicon
DRIE
Dry Oxides 30nm or Less
Dry Oxides Greater than 30nm
Evaporation
Lift-0ff
Low Stress Nitride
LTO 400C 300mT
Negative Photoresist
NIT DEP 200MPa
Parylene
PECVD
Phos Doping
Plasma
Positive Photoresist
PSG 400C 300mT
RIE
Solvent
Sputter
Stoichiometric Nitride
Undoped Polysilicon
Vapor Prime
Wafer Bonding
Wet Etch
Wet Oxidation
Wirebonding
Tool
Cambridge Fiji F200
CHA SEL600
CLEANOX
Denton 635
Denton Discovery 18
Denton SJ20C
Disco DAD641
DOPED OX
Etch Solution
EVG 520 IS
LTO Furnace
MEI Wedge
Multiple
NITRIDE Furnace
Oxford 100 ICP
Oxford Plasmalab 80
Oxford Plasmalab 80 Plus
POLY Furnace
SCS PDS-2010
Solvent Hood
Spin Rinse Dryer
Strasbaugh 6EC
Thick Resist
Thin Resist
TMV Super
Wet Bench
YES LP-III
Material
Acetone
Ag
Al
Al (3 in)
Al (4 in)
Al2O3
Au
Au (4 in)
AZ 9260
BB Bosch 10:5-15C 80:80 SF6-C4F8
BB Bosch 11:5-15C 80:80 SF6-C4F8
BB Bosch 12:5-15C 80:80 SF6-C4F8
BB Bosch 9:5-15C 80:80 SF6-C4F8
C
Cr
Cr (4 in)
Cu
Cu (4 in)
Descum
diH2O
Fe
GeSbTe
Glass
H2O, O2, N2
HMDS
IPA
Ir
Ir 10mT (3 in)
Ir 15mT (3 in)
Ir 5mT (3 in)
IrO
IrOx 10mT (3 in)
IrOx 15mT (3 in)
IrOx 5mT (3 in)
ITO
ITO (3")
ITO (4")
LOR 10B
Methanol
Mo
Mo (3 in)
N/A
NbTi 50:50
Ni
NiCr
NiCr (4 in)
NiFe 80:20
nLOF 2020
O2, N2
O2, N2, Boron Source Wafer
O2, N2, Phosphorus Source Wafer
Oxygen Plasma
Parylene
Piranha
Plasma Al2O3 250C
Plasma HfO2 200C
Plasma SiO2 150C
Plasma SiO2 200C
Plasma TiO2 250C
Polymer-Si-Polymer
Post-deposition
PR S1813
Pre-deposition
Pt
Pt (3 in)
RCA
S1813
Si
Si-Glass
Si-Metal-Si
Si-Si
SiCl2H2, NH3, N2
SiH4, N2
SiH4, O2
SiH4, O2, PH3 in SiH4
SiH4, PH3, N2
Silicon
SiN
SiNx (100C)
SiNx (300C)
SiO2
SiO2 (100C)
SiO2 (3 in)
SiO2 (300C)
SU-8 2025
SU-8 3005
Ta
Thermal Al203 100C
Thermal Al203 200C
Thermal Al203 250C
Thermal HfO2 200C
Thermal TiO2 250 C
Ti
Ti (3 in)
TiW
W
W (3 in)
YSZ